Gil H. Park, Ph.D.
Technical Consultant
Dr. Gil H. Park specializes in semiconductor materials and device applications, photonics and optoelectronic devices and brings 26 years of research and hands-on experience in the semiconductor field of technology. He obtained a Bachelor’s, Master’s and Doctorate degree in Physics from the Seoul National University of Korea. Dr. Park established a GaN center at the University of Oklahoma in 1997, which held a full set of equipment for semiconductor device package research. Dr. Park also served as a research professor at the University of Arkansas where he was responsible for GaN related research and development. In addition to his work experience at the University of Oklahoma and Arkansas, Dr. Park was appointed Vice President for Samsung Electro Mechanics Co., LTD, Korea and was responsible for the R&D of LEDs, Robotics and futuristic devices. He also served as the Director of HanLim Patents and Law Office.
Recently Dr. Park has extended his research studies in the area of robotics; the system for the future that will include all of the technologies such as sensors, communications, information, display and recognition. Dr. Park is a member of the American Physical Society (APS), The Minerals, Metals and Materials Society (TMS), The Optical Society (OSA), The Materials Research Society (MRS) and The International Society for Optics and Photonics (SPIE). Dr. Park also served as the administrator of the Association of Korean Physicists in America (AKPA) and the President and Oklahoma Chapter Vice President of the Korean Science and Engineers Association (KESA).
Dr. Park’s patent registered inventions consist of “Nitride Semiconductor Light Emitting Devices,” “Method of GaN selective Growth,” “Method of GaN Substrate Production using High Speed Growth,” “Design of Photo Mask for Pyramidal LED,” “Method of Pyramidal LED production,” “p-GaN Compound Semiconductor Selective Growth for Non-Planar LED Production,” III-N Nitride Semiconductor Light Emitting Devices,” “Methods of III-N Nitride Semiconductor Thin Films and III-N nitride semiconductor light emitting devices,” “Semiconductor Light Emitting Devices for Two Types Light Emission with Superlattices,” “Method of High Efficient Reflector Film with GaN,” and “Semiconductor Light Emitting Device with Control of Hole Movement.
”Publications: “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Sung Jin An, Jee Hae Chae, Gyu-Chul Yi and G. H. Park, APL 92, 121108 (2008)
“Efficient Alternating Current operated white LED chip,” Grigory A. Onushkin, Young-Jin Lee, Jung-Ja Yang, Hyung-Kun Kim, Joong-Kon Son, and G. H. Park, Submitted to APL.
“Optical properties of a Si delta-doped InGaN/GaN quantum well with ultraviolet emission,” Min-Ki Kwon, Il-Kyu Park, Ja-Yeon Kim, Jeom-Oh Kim, Seong-Bum Seo, Seong-Ju Park, Kyeongik Min, and G. H, Park, J. Appl. Phys. 102, 073115 (2007)
“Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition,” H.-K. Yuh, E. Yoon, S. K. Shee, J. B. Lam, C. K. Choi, G. H. Gainer, G. H. Park, S. J. Hwang, and J. J. Song, J. Appl. Phys. 91, 3483 (2002)
“Ultrafast carrier dynamics in a highly excited GaN epilayer,” C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, Phys. Rev. B 63, 115315 (2001).
“Optical properties and lasing in (In,Al)GaN-based structures,” S. Bidnyk, G. H. Gainer, S. K. Shee, J. B. Lam, B. D. Little, T. Sugahara, J. Krasinski, Y. H. Kwon, G. H. Park, S. J. Hwang, J. J. Song, G. E. Bulman, and H. S. Kong, phys. stat. sol. (a) 183, 105 (2001).
